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人才队伍
研究人员
毕业生
人才队伍
张冠华

简历

2000/09 – 2004/07,中国科学技术大学近代物理系,粒子物理与核物理专业,学士
2005/09 – 2011/01,中科院物理所表面物理国家重点实验室, 表面物理专业,博士
2009/12 – 2010/06, University of Texas at Austin,访问学者
2011/02–至今,大连化学物理研究所,助研
2015/01–2015/07,访问学者,Elettra-Sincrotrone Trieste
2013/12–至今,XPEEM建设及运行, 上海同步辐射光源


研究方向

• 利用超快时间分辨PEEM(TR-PEEM)研究二维材料异质结、金属/半导体
• 肖特基结中光生载流子的超快动力学
• 利用laser-PEEM研究金属纳米结构中表面等离激元的激发和传播性质
• 利用谱分析光电子/低能电子显微镜(SPELEEM)研究低维结构的生长和其中的新奇物性。
• 以X射线做光源的XPEEM在表面和纳米科学研究中的技术发展和应用


研究代表成果

(1) M. H. Cao et. al., Fully Alloying AuAg Nanorods in a Photothermal Nano-Oven: Superior Plasmonic Property and Enhanced Chemical Stability, J. Mater. Chem. C, 2018, accepted 
(2) X. W. Lu et. al., Observation and manipulation of visible edge plasmons in Bi2Te3 nanoplates, Nano Lett., 2018, accepted
(3) X. L. Wang et. al., Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing, Appl. Surf. Sci., 443(2018)567
(4) G. Y. Lu et. al., Synthesis of high-quality graphene and hexagonal Boron Nitride monolayer in-plane heterostructure on Cu-Ni alloy, Adv. Sci., 4(2017)1700076
(5) X. B. Zhou et. al., Modulating the electronic properties of monolayer graphene using a periodic quasi-one-dimensional potential generated by hex-reconstructed Au(001), ACS Nano, 10(2016)7550
(6) C. Yang et. al., Copper-vapor-assisted rapid synthesis of large AB-stacked bilayer graphene domains on Cu-Ni alloy, Small, 12(2016)2009
(7) 张冠华,孙巨龙,金艳玲,杨学明,用于谱分析光电子/低能电子显微镜的自动数据采集方法,2016.9.19,中国,201610830099.7
(8) G. H. Zhang et. al., A compact low energy electron microscope for surface analysis, Chin. J. Chem. Phys., 26(2013)369
(9) H. J. Qin et. al., Interaction of surface and interface plasmons in extremely thin Al films on Si(111)”, Appl. Phys. Lett., 102(2013)051605
(10) G. H. Zhang et. al., Growth of topological insulator Bi2Se3 thin films on SrTiO3 with large gate-voltage-tunable chemical potential, Adv. Func. Mater. 21, 2351 (2011)
(11) J. H. He et. al., Atomic structure of Sr-induced reconstructions on the Si(100) surface, J. Appl. Phys. 109, 083522 (2011)
(12) J. Chen et. al., Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bi2Se3, Phys. Rev. Lett. 105,176602(2010)
(13) G. H. Zhang et. al., Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3, Appl. Phys. Lett. 95, 053114 (2009)
 
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